
Hybrid Bonding to Debut with HBM4E
SK Hynix pioneers hybrid bonding in HBM4E, enhancing bandwidth, efficiency, and memory integration for AI and high-performance computing.
SK Hynix pioneers hybrid bonding in HBM4E, enhancing bandwidth, efficiency, and memory integration for AI and high-performance computing.
Learn about preventing electrostatic discharge (ESD) damage with protection principles, testing methods, and design strategies for ICs.
DDR4 phase-out by 2025 shakes memory market as Samsung, SK Hynix, and Micron shift to DDR5 and HBM, creating opportunities for others.
HBM3E boosts AI training with 9.6 Gb/s bandwidth, offering high performance and efficiency for accelerators and GPUs.