Why DDR5 Is So Stable
Explore DDR5 reliability: how RAS features, on-die ECC, DCA, DQS oscillator, CRC and DFE, enable stable high-speed memory.
Explore DDR5 reliability: how RAS features, on-die ECC, DCA, DQS oscillator, CRC and DFE, enable stable high-speed memory.
DRAM trends: sustained multiplicative scaling, rising density and per-die capacity, and evolving I/O strategies (HBM, GDDR, DDR, LPDDR) 2010s-2020s
DirectCXL uses CXL.mem to access disaggregated memory with load/store semantics, reducing latency vs RDMA up to 8.3× and improving real workloads ~3×.
Explore memory hierarchy, cache basics, locality principles, and practical tips for writing cache-friendly code to boost performance.
Explore memory chip types, NAND flash benefits, serial vs raw NAND differences, and SIDesigner simulation tips for NAND flash modeling.
DMA explained: offload the CPU for efficient memory-to-peripheral and peripheral-to-memory transfers, buffering, ADC/DAC pipelines, and concurrency.
Learn how DMA enables direct peripheral-to-memory transfers, reducing CPU involvement in I/O on Linux and improving system efficiency.
Comprehensive SD card guide: speed classes, capacities, form factors, SD/SPI interfaces, protocol and hardware design tips for reliable integration.
TigerGraph's 108TB LDBC SNB BI benchmark: 217.9B vertices, 1.6T edges, OLAP query performance, scalability, and infrastructure insights.
MRAM: non-volatile memory with SRAM-like speed, DRAM density and virtually unlimited endurance using magnetic tunnel junctions.
Explains DDR5 subchannels: splitting 64-bit DIMMs into two 32-bit subchannels so BL=16 yields 64-byte transfers matching CPU cache lines.
Computer memory explained: primary vs secondary, volatile vs nonvolatile, RAM, ROM, HDDs and SSDs - uses and trade-offs.
Channel hole formation and high-aspect-ratio etching for stacked memory: amorphous carbon mask, ICP/CCP RIE, control of diameter, sidewalls and depth.
3D NAND fabrication: substrate prep, stacked oxide/nitride layers, channel via & slit etch, TiN/W fill, polysilicon channels and metal bitlines
Phase-change and PCM explained: GST materials, SET/RESET pulse programming, electrical characterization and test setups for PCM devices.
Explore RRAM: fast, low-power resistive memory for neuromorphic computing, in-memory acceleration, and scaling, retention and variability challenges.
HBM4 overview: principles, advantages, applications and trends in high-bandwidth memory for AI, HPC, and data centers.
JesFS: tiny, reliable embedded file system for ultra-low-power devices, small RAM/flash footprint, robust logging, remote sync and safe updates.
Learn how computers store data in binary, how flash memory's floating-gate transistors work, and flash endurance and wear-leveling.
KAIST demos ultra-low-power phase-change memory using self-confined nano-filament, 15x lower power and lithography-free for neuromorphic AI.