Understanding MRAM Principles and Technology

MRAM: non-volatile memory with SRAM-like speed, DRAM density and virtually unlimited endurance using magnetic tunnel junctions.

Why DDR5 DIMMs Use Two Subchannels

Explains DDR5 subchannels: splitting 64-bit DIMMs into two 32-bit subchannels so BL=16 yields 64-byte transfers matching CPU cache lines.

3D NAND Channel Hole Etching Steps

Channel hole formation and high-aspect-ratio etching for stacked memory: amorphous carbon mask, ICP/CCP RIE, control of diameter, sidewalls and depth.

3D NAND Fabrication Process Overview

3D NAND fabrication: substrate prep, stacked oxide/nitride layers, channel via & slit etch, TiN/W fill, polysilicon channels and metal bitlines

What Is Phase-Change Memory and How to Characterize It

Phase-change and PCM explained: GST materials, SET/RESET pulse programming, electrical characterization and test setups for PCM devices.

Resistive Memory: Architecture and Applications

Explore RRAM: fast, low-power resistive memory for neuromorphic computing, in-memory acceleration, and scaling, retention and variability challenges.

HBM Technology: Principles and Advantages

HBM4 overview: principles, advantages, applications and trends in high-bandwidth memory for AI, HPC, and data centers.

JesFS Flash File System for Small Controllers

JesFS: tiny, reliable embedded file system for ultra-low-power devices, small RAM/flash footprint, robust logging, remote sync and safe updates.

How Flash Memory Stores Data

Learn how computers store data in binary, how flash memory's floating-gate transistors work, and flash endurance and wear-leveling.

Korean team develops ultra-low-power phase-change memory

KAIST demos ultra-low-power phase-change memory using self-confined nano-filament, 15x lower power and lithography-free for neuromorphic AI.