Challenges in High-Voltage Power Device Design

Overview of SiC MOSFETs for high-voltage power electronics: benefits over silicon, 1700V devices, switching and conduction losses, and implications for EV/renewables.

GaN Heteroepitaxy on 2D Materials and Applications

Explore GaN heteroepitaxy on 2D materials (graphene, h-BN) for reduced dislocations, easier layer release and improved thermal management.

MOSFET Features and Practical Applications

Practical guide to using enhancement-mode NMOS with microcontrollers: switching, PWM dimming, and choosing Vgs(th), Rds(on) and Cgs.

Operating Principles of Silicon Carbide Power Devices

Explore how silicon carbide (SiC) power devices boost efficiency, high-temperature stability and voltage handling for EVs, renewables and HVDC.

Investigating Transistor Anomalies Caused by Weather

Why SOT23 devices cause 5V rail drop in low-temp/high-humidity tests and how lowering pull-up resistor prevents failures.

Why 50V μF-Level MLCCs Short Under 24V/28V

Why 50V MLCCs short under 24-28V: thin-dielectric breakdown causes and fixes, use larger packages, parallel high-voltage MLCCs, or alternative caps.