Why Low-RDS(on) MOSFETs Still Heat Up
Learn MOSFET drain breakdown mechanisms, heating causes and mitigations, reverse-polarity protection techniques, and power-loss measurement tips.
Learn MOSFET drain breakdown mechanisms, heating causes and mitigations, reverse-polarity protection techniques, and power-loss measurement tips.
Technical overview of MOV aging mechanisms and protection strategies: parallel and series use with ceramic gas discharge tube (GDT) for improved surge protection and longevity.
Explains capacitive reactance (XC), its frequency dependence, formula XC = 1/(2πfC), and use in RC networks and passive low?pass/high?pass filters.
Technical overview of MOSFET gate functions and drive implementations, including direct drive, external drivers, speed?up diode, PNP turn?off, floating and isolated drives.
Guide to internal ESD diodes and overvoltage protection for amplifier inputs, covering diode topologies, current limiting, thermal effects, and electromigration.
Overview of MOSFET gate drive principles, gate-to-source capacitance and gate charge, threshold behavior, and gate charge calculation for driver circuit design.
Overview of MOSFET drive topologies: power IC direct, push-pull, accelerated turn-off and isolated transformer drives, with gate drive considerations and component guidance.
Overview of Schottky diode characteristics and usage notes, including forward voltage, reverse leakage behavior, and why paralleling identical diodes risks unequal current sharing.
Guide to JEDEC MOSFET gate-charge testing with the 4200A-SCS: use two SMUs in Clarius to measure Qg, Qgs, Qgd and compensate offset capacitance.
SiC power devices for EVs: market trends, tech advances, module growth and cost drivers shaping EV powertrain adoption.
Technical comparison of SiC MOSFETs and Si SJ-MOSFETs covering material properties, static characteristics, RDS(ON) behavior, thermal and switching trade-offs.
Technical guide to reading a MOSFET datasheet, focusing on SOA curve interpretation, practical current limits (continuous and pulse), and relevance of switching parameters.
Decode MOSFET datasheets: learn which parameters matter (UIS, SOA, currents, switching) and avoid misleading supplier comparisons.
Technical analysis of IGBT switching with diode?clamped inductive load: interval-by-interval turn-on/turn-off waveforms, diode recovery, tail current, and driver requirements.
Compare diode, BJT, MOSFET and dedicated IC level shifters for voltage translation: pros, cons, and best use cases for I2C, UART, GPIO.
Learn the working principle of diode protection circuits and how they safeguard against reverse voltage and current in electronics.
Comparison of MOSFET and IGBT power switches: structural differences, on-resistance, switching frequency limits, body diode behavior, and typical application use cases.
Technical overview of SiC crystal growth methods—PVT, high?temperature solution growth, and HTCVD—detailing process steps, benefits, and limitations.
Review of SiC power device interconnects, covering planar, 3-D and hybrid techniques, impacts on parasitic inductance and thermal management, and key material/process challenges.
Explore PMOS reverse-protection circuits: operation, body-diode orientation, zener VGS protection, drawbacks: standby current, backfeed and cost.