Inductor Overheating: Troubleshooting Steps

Switch-mode regulator troubleshooting: inductor overheating and unstable SW traced to inappropriate output capacitor ESR; replacing with ceramic/tantalum restored loop stability.

Silicon Carbide Power Devices: Operation and Applications

Technical overview of silicon carbide (SiC) power devices: operation, benefits, applications, challenges and future trends for high-temperature, efficient power electronics.

4 Types of MOSFET Gate Drive Circuits

Overview of MOSFET drive topologies: power IC direct, push-pull, accelerated turn-off and isolated transformer drives, with gate drive considerations and component guidance.

Comparison of SiC MOSFET, SJ-MOSFET and IGBT Performance

Technical comparison of SiC MOSFETs and Si SJ-MOSFETs covering material properties, static characteristics, RDS(ON) behavior, thermal and switching trade-offs.

GeSi SPAD Devices: Concept and Benchmark

Room-temperature, CMOS-compatible GeSi SPAD with 19 kHz μm?2 DCR, 12% PDE at 1310 nm and 188 ps jitter, validated in direct-TOF LiDAR imaging.

Power MOSFET Forward and Reverse Conduction Circuits

Technical overview of power MOSFET equivalent circuits, steady-state Rds(on) behavior, turn-on/turn-off dynamics, and diode reverse-recovery switching characteristics.

Capacitive Reactance: Three Practical Examples

Explains capacitive reactance (XC), its frequency dependence, formula XC = 1/(2πfC), and use in RC networks and passive low?pass/high?pass filters.

SiC Power Devices: Key Advantages and Technical Challenges

Technical summary of silicon carbide (SiC) power devices: wide bandgap advantages, thermal and voltage benefits, manufacturing challenges, EV and renewable energy applications.

Is Current-Sense Resistor Selection Simple?

Examines trade-offs in selecting a current-sense resistor: voltage drop, IR loss, self-heating and TCR effects, plus strategies to optimize accuracy and heat dissipation.

Design of Non-Discharging RCD Snubber for SiC MOSFET

Analysis of non-discharging RCD snubber design for SiC MOSFETs: CSNB/RSNB selection, surge clamping, reduced ringing, and effects on switching loss and efficiency.